Optimized performance for
Powered by Samsung's cutting-edge 3D V-NAND
technology, 850 EVO delivers top-class sequential
and random read and write performance to
optimize everyday computing. With improved
performance thanks to TurboWrite technology the
850 EVO provides not only more than a 10% better
user experience than 840 EVO but up to 1.9x faster
random write speeds for the 120/250 GB models
as well. In fact, the 850 EVO delivers top class
sequential read (540 MB/s) and write (520 MB/s)
performance in all capacities. This comes with
optimized random read and write performance on
all QD and improved QD1 and QD2 random
performance for Client PC usage.
Reinforcement of TurboWrite
In the early stages of the 840 EVO, Samsung
adopted sequential write performance first. With
TurboWrite, write speeds are significantly
accelerated during data transfers by creating a
high-performance write buffer in the SSD. If a
consecutive write operation (i.e. no idle time)
exceeds the size of the buffer, the transfer will exit
TurboWrite and be processed at ”After TurboWrite”
speeds. Once the buffer is cleared, TurboWrite
performance will resume. However, the buffer size
for TurboWrite is more than sufficient for everyday
PC use, and you should experience accelerated
speeds for most workloads.
For the 850 EVO, enhanced TurboWrite
technology applied to random write speeds up to
1.9x faster for the 120 GB model and 1.25x faster
for the 250GB model over the 840 EVO.
Advanced data encryption
The 850 EVO provides the same data encryption
feature as the 840 EVO does. Self-Encrypting Drive
(SED) security technology will help keep data safe
at all times. It includes an AES 256-bit hardwarebased
encryption engine to ensure that your
personal files remain secure. Being hardwarebased,
the encryption engine secures your data
without performance degradation that you may
experience with a software-based encryption. Also,
850 EVO is compliant with advanced security
management solutions (TCG Opal and IEEE 1667).
Magician will guide ”How to use security features”.
Furthermore, you can erase or initialize data with
the crypto erase service with PSID.
The 850 EVO delivers guaranteed endurance and
reliability by doubling the TBW compared to the
previous generation 840 EVO backed by an
industry leading 5 year warranty.
With twice the endurance of a typical NAND flash
SSD, the 850 EVO will keep working as long as you
do. The 850 EVO guarantees a 5 year limited
warranty or 75TBW for 120GB and 250GB, 150TBW
for 500GB and 1TB.
Enhanced reliability with improved
With enhanced reliability through improved
sustained performance, the 850 EVO assures longterm
dependable performance up to 30% longer
than the 840 EVO with minimized performance
degradation. This means you can use it every day
when taking care of work or entertaining yourself
knowing it will keep performing even with heavy
daily workloads over the years.
Efficient power management
for all PC applications
Power consumption affects everyone. You
actually save of up to 50% more on power than
with the 840 EVO during write operations thanks
to 3D V-NAND consuming half the power of 2D
Plus, whether it’s preserving battery life for longer
cordless use or just saving on costs, power
management is important. Device sleep signals
the SSD to enter a low power state which is vital for
ultra-books and other battery powered devices.
With 850 EVO’s Device Sleep at a highly efficient
2mW you get longer battery life on your notebook
thanks to a controller optimized for 3D V-NAND.
With the 850 EVO you can work and play longer
without having to plug in.
Usage Application Client PCs
Capacity 120GB, 250GB, 500GB, 1TB(1,000GB)
Dimensions (LxWxH) 100 x 69.85 x 6.8 (mm)
Interface SATA 6Gb/s (compatible with SATA 3Gb/s and SATA 1.5Gb/s)
Form Factor 2.5 inch
Controller 120/250/500GB :
Samsung MGX controller
1TB: Samsung MEX controller
NAND Flash Memory Samsung 32 layer 3D V-NAND
DRAM Cache Memory 256MB (120GB) or 512MB(250GB&500GB) or 1GB (1TB) LPDDR2
Sequential Read: Max. 540 MB/s
Sequential Write**: Max. 520 MB/s
Random Read (QD1): Max. 10,000 IOPS
4KB Random Write(QD1): Max. 40,000 IOPS
Max. 98,000 IOPS(500GB/1TB)
Max. 97,000 IOPS(250GB)
Max. 94,000 IOPS(120GB)
Random Write(QD32): Max. 90,000 IOPS(500GB/1TB)
Max. 88,000 IOPS(120GB/250GB)
Data Security AES 256-bit Full Disk Encryption (FDE)
TCG/Opal V2.0, Encrypted Drive(IEEE1667)
Weight Max. 66g (1TB)
Reliability MTBF: 1.5 million hours
Active Read/Write (Average): Max. 3.7W(1TB) / Max. 4.4W(1TB)
Idle: Max. 50mW
Device Sleep: 2mW(120/250/500GB), 4mW(1TB)
Supporting features TRIM(Required OS support), Garbage Collection, S.M.A.R.T
0°C to 70°C
-40°C to 85°C
Humidity 5% to 95%, non-condensing
Vibration Non-Operating: 20~2000Hz, 20G
Shock Non-Operating: 1500G , duration 0.5m sec, 3 axis
Warranty 5 years limited
* Sequential performance measurements based on CrystalDiskMark v.3.0.1.
Random performance measurements based on Iometer 2010.
Performance may vary based on SSD’s firmware version, system hardware & configuration.
Test system configuration : Intel Core i7-4790K @ 4.0GHz, DDR3 1600MHz 8GB, OS – Windows7 Ultimate x64 SP1, IRST 184.108.40.2061,
Chipset : Intel® Z97
** Sequential Write performance measurements based on TurboWrite technology,
The sequential write performances after TurboWrite
region are 150MB/s(120GB), 300MB/s(250GB), 500MB/s(500GB) and 520MB/s(1TB).
*** Power consumption measured with IOmeter 1.1.0 with Intel i7-4770K, DDR3 8GB, Intel®DH87RL OS- Windows7 Ultimate x64 SP1